The present proposal aims to realise an integrated pilot line focused on the developments of the wide–bandgap (WBG) semiconductors technologies for power and radio frequency (RF) electronics. The project will be realised by strengthening the existing facilities located in Finland, Italy, Poland, France, Austria, Germany and Sweden, and involving Universities and Research centres of the seven above-mentioned States operating in the field of advanced semiconductors and related technologies. The WBG semiconductor pilot lines will address all the front–end critical issues related to the realisation of devices with power and RF performance much higher than those realised by the conventional silicon technology, will define a clear roadmap for the development of such advanced technologies, will investigate strategies to improve the structural and electrical properties of WBG (and Ultra–WBG) semiconductors, and will develop new MEMS devices based on WBG and Ultra-WBG devices.