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NANODYN

Dynamic Mott transition for Nanoelectronics
Funder: French National Research Agency (ANR)Project code: ANR-21-CE24-0001
Funder Contribution: 276,823 EUR
Description

Correlated materials are highly promising for micro and nanoelectronics, with the possibility to change the state of matter by a short electrical or optical excitation. In particular, the use of the dynamic phase transition observed in canonical narrow gap Mott insulators, which gives rise to specific volatile and non-volatile resistive switching under electric pulses, has been proposed for the realization of ultra-compact artificial neurons. The NANODYN project aims to achieve a multiscale analysis offered by the use of a multiprobe scanning tunneling microscop coupled to a time resolved optical system, to determine the fundamental properties necessary for the development of basic neuromorphic components at the nanoscale. The project also includes the fabrication and characterisation of Mott insulators single layers in view of future compact neuromorphic devices implementation.

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<script type="text/javascript">
<!--
document.write('<div id="oa_widget"></div>');
document.write('<script type="text/javascript" src="https://www.openaire.eu/index.php?option=com_openaire&view=widget&format=raw&projectId=anr_________::9f5ede01669688508a53257b0f63ddfb&type=result"></script>');
-->
</script>
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