TopGaN
TopGaN
2 Projects, page 1 of 1
assignment_turned_in ProjectFrom 2015Partners:CNRS/Centre de Recherche sur lHétéro-Epitaxie et ses Applications (CRHEA), CNRS/Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), STMicroelectronics, TopGaN, Consiglio Nazionale delle Ricerche (CNR) / Istituto per la Microelettronica e Microsistemi (IMM)CNRS/Centre de Recherche sur lHétéro-Epitaxie et ses Applications (CRHEA),CNRS/Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA),STMicroelectronics,TopGaN,Consiglio Nazionale delle Ricerche (CNR) / Istituto per la Microelettronica e Microsistemi (IMM)Funder: French National Research Agency (ANR) Project Code: ANR-15-GRFL-0012Funder Contribution: 134,362 EURThe GraNitE project aims at the realization of high quality graphene (Gr) heterostructures with thin films of Nitride (III-N) semiconductors, i.e. GaN, AlN and related alloys (AlxGa1-xN). These will be employed for the implementation of novel vertical devices, such as the Gr/AlGaN/GaN Schottky diode with a gate modulated Schottky barrier for logic applications, and the Hot Electron Transistor with Gr Base for ultra-high-frequency (ft>1THz) applications. In particular, taking benefit from the wide bandgap of III-N and from the high mobility 2DEGs of Gr and AlGaN/GaN interface, excellent Ion/Ioff ratios (>1e8) and very low off-state current (Ioff
more_vert assignment_turned_in ProjectFrom 2017Partners:UPT, Institut Polytechnique de Bordeaux, CNRS, LG, INC +15 partnersUPT,Institut Polytechnique de Bordeaux,CNRS,LG,INC,University of Bordeaux,CRISTALINNOV,Grenoble INP - UGA,ICMCB,E-MRS,Polish academy of Science,FHG,TopGaN,EURORAD SA,INOPRO IAO,IKZ,RSA le Rubis,Bulgarian Academy of science,WUT,IBPFunder: French National Research Agency (ANR) Project Code: ANR-17-MRS4-0005Funder Contribution: 30,000 EURProducing high quality crystals for technological applications is still a challenging task. The manufacturing industry is confronted with complex interdependent physical problems, leading to costly trial-error developments. In parallel scientists, with a broad expertise in numerical simulation and advanced materials science and technology, develop physical models and approaches for numerical modelling. However those developments benefit only to a small number of companies. The core part of the project is to propose a web based marketplace teaching and linking manufacturing industry in the field of crystal growth to materials and process modelling. This will be done through developing a web hub containing an information database to provide the state-of-art in numerical modelling of crystal growth and an open calculation platform. It will allow linking manufacturing industry to modelling community, through high scientific level academic society acting as “translator”. For that, participants in the project, as well as other experts, will offer their portfolio in terms of training/education, numerical simulation, experimental validation, analysis of physico-chemistry of crystal growth processes and physical property measurements. According to our statistics, this could involve, in Europe, up to 150 SMEs and 100 laboratories. The hub will provide an organized set of databases, collecting material properties, comprehensive and convenient bibliography and some examples of typical industrial growth processes simulations. It will also offer integrated software infrastructure, experimental validation procedures for the developed numerical models and experimental data management tools specific to crystal growth processes. This project has the ambition to increase the use of materials simulation by this industrial activity, which provides the basis of many present high technologies. It is likely to increase innovation, reduce costs and decrease time needed for development.
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