Optical imaging is perhaps the single most important sensor modality in use today. Its use is widespread in consumer, medical, commercial and defence technologies. The most striking development of the last 20 years has been the emergence of digital imaging using complementary metal oxide semiconductor (CMOS) technology. Because CMOS is scalable, camera technology has benefited from Moore's law reduction in transistor size so that it is now possible to buy cameras with more than 10 MegaPixels for £50. The same benefits are beginning to emerge in other imaging markets - most notably in infrared imaging where 64x64 pixel thermal cameras can be bought for under £1000. Far infrared (FIR), or terahertz, imaging is now emerging as a vital modality with application to biomedical and security imaging, but early imaging arrays are still only few pixel research ideas and prototypes that we are currently investigating. There has been no attempt to integrate the three different wavelength sensors coaxially on to the same chip. Sensor fusion is already widespread whereby image data from traditional visible and mid infrared (MIR) sensors is overlaid to provide a more revealing and data rich visualisation. Image fusion permits discrepancies to be identified and comparative processing to be performed. Our aim is to create a "superspectral" imaging chip. By superspectral we mean detection in widely different bands, as opposed to the discrimination of many wavelengths inside a band - e.g. red, green and blue in the visible band. We will use "More than Moore" microelectronic technology as a platform. By doing so, we will leverage widely available low-cost CMOS to build new and economically significant technologies that can be developed and exploited in the UK. There are considerable challenges to be overcome to make such technology possible. We will hybridise two semiconductor systems to integrate efficient photodiode sensors for visible and MIR detection. We will integrate bolometric sensing for FIR imaging. We will use design and packaging technologies for thermal isolation and to optimise the performance of each sensor type. We will use hybridised metamaterial and surface plasmon resonance technologies to optimise wavelength discrimination allowing vertical stacking of physically large (i.e. FIR) sensors with visible and MIR sensors. We ultimate want to demonstrate the world's first ever super-spectral camera.

Global demand for high power microwave electronic devices that can deliver power densities well exceeding current technology is increasing. In particular Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) are a key enabling technology for high-efficiency military and civilian microwave systems, and increasingly for power conditioning applications in the low carbon economy. This material and device system well exceeds the performance permitted by the existing Si LDMOS, GaAs PHEMT or HBT technologies. GaN-based HEMTs have reached RF power levels up to 40 W/mm, and at frequencies exceeding 300 GHz, i.e., a spectacular performance enabling disruptive changes for many system applications. However, transistor reliability is driven by electric field and channel temperature, so self-heating means in practice that reliable devices can only be operated up to RF power densities of 10 W/mm in contrast to the 40 W/mm hero data published in the literature. Considerable concern also exists in the UK and across Europe that access to state-of-the-art GaN microwave technology is limited by US ITAR (International Traffic in Arms Regulation) restrictions. The most advanced capabilities for all elements of GaN HEMT technology, using traditional SiC substrates, epitaxy and device processing currently reside in the US, with restricted access by UK industry. The vision of Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs (GaN-DaME) is to develop transformative GaN-on-Diamond HEMTs and MMICs, the technology step beyond GaN-on-SiC, which will revolutionize the thermal management which presently limits GaN electronics. Challenges occur in terms of how to integrate such dissimilar materials into a reliable device technology. The outcome will be devices with a >5x increase in RF power compared to GaN-on-SiC, or alternatively and equally valuably, a dramatic 'step-change' shrinkage in MMIC or PA size, and hence an increase in efficiency through the removal of lossy combining networks as well as a reduction in power amplifier (PA) cost. This represents a disruptive change in capability that will allow the realisation of new system architectures e.g. for RF seekers and medical applications, and enable the bandwidths needed to deliver 5G and beyond. Reduced requirements for cooling / increased reliability will result in major cost savings at the system level. To enable our vision to become reality, we will develop new diamond growth approaches that maximize diamond thermal conductivity close to the active GaN device area. In present GaN-on-Diamond devices a thin dielectric layer is required on the GaN surface to enable seeding and successful deposition of diamond onto the GaN. Unfortunately, most of the thermal barrier in these devices then exists at this GaN-dielectric-diamond interface, which has much poorer thermal conductivity than desired. Any reduction in this thermal resistance, either by removing the need for a dielectric seeding layer for diamond growth, or by optimizing the grain structure of the diamond near the seeding, would be of huge benefit. Novel diamond growth will be combined with innovative micro-fluidics using phase-change materials, a dramatically more powerful approach than conventional micro-fluidics, to further aid heat extraction. An undiscussed consequence of using diamond, its low dielectric constant, which poses challenges and opportunities for microwave design will be exploited. At the most basic level, the reliability of this technology is not known. For instance, at the materials level the diamond and GaN have very different coefficients of thermal expansion (CTE). Mechanically rigid interfaces will need to be developed including interdigitated GaN-diamond interfaces.

The Scottish Manufacturing Institute aims to research technology for manufacture, addressing the requirements of European, UK and regional industries. It taps into the broad expanse of research at Heriot-Watt University to deliver innovative manufacturing technology solutions. The SMI delivers high quality research and education in innovative manufacturing technology for high value, lower volume, highly customised, and high IP content products that enable European and UK Manufacturers to compete in an environment of increased global competition, environmental concern, sustainability and regulation, where access to knowledge, skills and IP determine where manufacturing is located. Our mission is to deliver high impact research in innovative manufacturing technologies based on the multidisciplinary technology resource across Heriot-Watt University, the Edinburgh Research Partnership, the Scottish Universities Physics Alliance and beyond. The Institute is organised into three themes:- Digital Tools;- Photonics; and - MicrosystemsThe vision of the Digital Tools Theme is to provide tomorrow's engineers with tools that will help them to easily capture, locate, exploit and manipulate 3D information for mechanical products of all kinds using distributed, networked resources. Photonics has strong resonance with the needs of developed economies to compete in the 21st Century global market for manufacturing, providing: routes to low cost automated manufacture; and the key processes underpinning high added value products. We have a shared conviction that photonics technologies are an essential component of any credible strategy for knowledge-based industrial production. The Photonics Theme vision is for the SMI to be internationally recognised as the leading UK focus for industrially-relevant photonics R&D, delivering a mix of academic and commercial outputs in hardware, process technology and production applications.The principal strategy of the Microsystems Theme is to research into new integration and packaging solutions of MEMS that are low cost, mass manufacturable and easily adoptable by the industry. The vision is to become a European Centre of Excellence in MEMS integration and packaging over the next 5 years. We thus aspire to service UK manufacturing industry with innovative technology for high value, lower volume, highly customised, and high IP content products; and to help UK industry expand globally in an internationally competitive market.